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FEATURES * Isolation Test Voltage: 2500 VACRMS * TTL Compatible * High Bit Rates: 1 Mbit/s * High Common-Mode Interference Immunity * Bandwidth 2 MHz * Open-Collector Output * External Base Wiring Possible * Field-Effect Stable by TRIOS* * Underwriters Lab File #E52744 DESCRIPTION The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photodetector which consists of a photodiode and a high-speed transistor in a DIP8 plastic package. Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. Maximum Ratings Emitter Reverse Voltage .................................................5 V Forward Current ............................................25 mA Peak Forward Current (t =1 ms, duty cycle 50%) ............................50 mA Maximum Surge Forward Current (t 1 s, 300 pulses/s).......................................1 A Thermal Resistance................................... 700 K/W Total Power Dissipation (TA70C) ...............45 mW Detector Supply Voltage ..................................... -0.5 to 15 V Output Voltage .................................... -0.5 to 15 V Emitter-Base Voltage ......................................... 5 V Output Current.................................................8 mA Maximum Output Current ..............................16 mA Base Current .................................................. 5 mA Thermal Resistance................................... 300 K/W Total Power Dissipation (TA70C) .............100 mW Package Isolation Test Voltage (between emitter and detector climate per DIN 40046, part 2, Nov. 74 (t=1min.) ............... 2500 VACRMS Pollution Degree (DIN VDE 0109) ......................... 2 Creepage ...........................................................7 mm Clearance ...........................................................7 mm Comparative Tracking Index per DIN IEC112/VDE 0303 part 1, Group IIIa per DIN VDE 6110 ........................ 175 Isolation Resistance VIO=500 V, TA = 25C ............................... 1012 VIO=500 V, TA = 100C ............................. 1011 Storage Temperature Range ....... -55C to +125C Ambient Temperature Range ...... -55C to +100C Soldering Temperature (max. 10 sec., dip soldering 0.5 mm from case bottom).............................................. 260C *TRIOS--TRansparent IOn Shield
6N135 6N136
HIGH-SPEED 2.5 kV TRIOS(R) OPTOCOUPLER
Dimensions in inches (mm)
4 3 2 1
Pin One I.D.
NC
1 2 3 4
8 7 6 5
Cathode (VCC) Base (VB) Collector (VO) Emitter (GND)
.268 (6.81) .255 (6.48)
Anode Cathode NC
5
6
7
8
.390 (9.91) .379 (9.63)
.045 (1.14) .030 (.76) .150 (3.81) .130 (3.30)
.305 typ. (7.75) typ.
.135 (3.43) .115 (2.92) 4 Typ. .022 (.56) .018 (.46) .100 (2.54) Typ. .040 (1.02) .030 (.76 ) 3-9 10 Typ.
.012 (.30) .008 (.20)
Characteristics (TA=0 to 70C unless otherwise specified, TA=25C typ.)
Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Temperature Coefficient, Forward Voltage Detector Supply Current Logic Low Supply Current Logic High Output Voltage, Output Low 6N135 6N136 Output Current, Output High Output Current, Output High Current Gain Package Coupling Capacitance Input-Output Current Transfer Ratio 6N135 6N136 6N135 6N136 5-1 CTR CTR CTR CTR 16 (7) 35 (19) 5 15 % % % IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25C IF=16 mA, VO=0.5 V, VCC=4.5 V CIO 0.6 pF f=1 MHz ICCL ICCH 150 0.01 (1) A A IF=16 mA, VO open, VCC=15 V IF=0 mA, VO open, VCC=15 V IF=16 mA, VCC=4.5 V IO=1.1 mA IO=2.4 mA IF=0 mA, VO=VCC=5.5 V IF=0 mA VO=VCC=15 V VO=5 V, IO=3 mA Symbol VF VBR IR CO VF /TA 1.6 (1.9) 5 0.5 (10) 125 -1.7 Unit V V A pF mV/C Condition IF=16 mA IR=10 A VR=5 V VR=0 V, f=1 MHz IF=16 mA
VOL VOL ICH
0.1 (0.4) 0.1 (0.4) 3 (500)
V V nA
ICH HFE
0.01 (1) 150
A
This document was created with FrameMaker 4.0.4
Figure 1. Switching times
IF
Delay Time (IF=16 mA, VCC=5 V, TA=25C)
High - Low 6N135 (RL=4.1 k) 6N136 (RL=1.9 k)
t
tPHL tPHL tPLH tPLH
0.3 (1.5) 0.2 (0.8) 0.3 (1.5) 0.2 (0.8)
s s s s
VO
Low - High 6N135 (RL=4.1 k) 6N136 (RL=1.9 k)
5V 1.5 V t tPHL tPLH
VOL
Common Mode Interference Immunity (VCM=10 VP-P, VCC=5 V, TA=25C) High (IF=0 mA) 6N135 (RL=4.1 k) 6N136 (RL=1.9 k) Low (IF=16 mA) 6N135 (RL=4.1 k) 6N136 (RL=1.9 k) CMH CMH CML CML 1000 1000 1000 1000 V/s V/s V/s V/s
Pulse generator ZO=50 tr,tf=5 ns duty cycle 10% t100 s
1 IF 2 IF Monitor 3 100 4 7 6 5 RL VO CL 15 pF 8 5V
Figure 3. Output characteristics-6N135 Output current versus output voltage (TA=25C, VCC=5 V)
Figure 2. Common-mode interference immunity
VCM 10 V 90% 10% tr tf 10% 90% t
0V VO 5V
A: IF=0 mA VO t
VOL
B: IF=16 mA t
Figure 4. Output characteristics-6N136 Output current versus output voltage (TA=25C, VCC=5 V)
5V RL VO
IF
1 2 3 4
8 7 6 5
A B VFF
+VCM Pulse generator
ZO=50 tr,tf=8 ns
6N135/136
5-2
Figure 5. Permissible forward current of emitting diode versus ambient temperature
Figure 8. Small signal transfer ratio versus forward current (VCC=5 V, TA=25C)
Figure 11. Delay times versus ambient temperature (IF=16 mA, VCC=5 V, 6N135: RL=4.1 k, 6N136: RL=1.9 k)
Figure 6. Permissible total power dissipation versus ambient temperature
Figure 9. Current transfer ratio (normalized) versus ambient temperature (normalized to IF=16 mA, VO=0.4 V, VCC=5 V, TA=25C)
Figure 12. Current transfer ratio (normalized) versus forward current (IF=16 mA, VO=0.4 V, VCC=5 V, TA=25C)
Figure 7. Forward current of emitting diodeversus forward voltage (TA=25C)
Figure 10. Output current (high)versus ambient temperature (VO=VCC=5 V, IF=0)
6N135/136
5-3

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